Tunable Topological Phase Transitions in a Piezoelectric Janus Monolayer
arXiv:2401.13124 · doi:10.1021/acsanm.4c04016
Abstract
Quantum Spin Hall (QSH) insulators represent a quintessential example of a topological phase of matter, characterized by a conducting edge mode within a bulk energy gap. The pursuit of a tunable QSH state stands as a pivotal objective in the development of QSH-based topological devices. In this study, we employ first-principles calculations to identify three strain-tunable QSH insulators based on monolayer MAlGaTe4 (where M represents Mg, Ca, or Sr). These monolayers exhibit dynamic stability, with no imaginary modes detected in their phonon dispersion. Additionally, they possess piezoelectric properties, rendering them amenable to strain-induced tuning. While MgAlGaTe4 is a normal insulator under zero strain, it transitions into the QSH phase when subjected to external strain. Conversely, CaAlGaTe4 and SrAlGaTe4 already exhibit the QSH phase at zero strain. Intriguingly, upon the application of biaxial strain, these two compounds undergo phase transitions, encompassing metallic (M), normal/trivial insulator (NI), and topological insulator (TI) phases, thereby illustrating their strain-tunable electronic and topological properties. (Ca, Sr)AlGaTe4, in particular, undergo M-TI/TI-M transitions under applied strain, while MgAlGaTe4 additionally experiences an M-NI/NI-M transition, signifying it as a material featuring a metal-insulator transition (MIT). Remarkably, the observation of metal-trivial insulator-topological insulator transitions in MgAlGaTe4 introduces it as a unique material platform in which both MIT and topological phase transitions can be controlled through the same physical parameter. Our study thus introduces a novel material platform distinguished by highly strain-tunable electronic and topological properties, offering promising prospects for the development of next-generation, low-power topological devices.
37 pages, 13 figures
References in corpus (14)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
- Quantum ESPRESSO toward the exascale
- Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
- Nonlocal edge state transport in the quantum spin Hall state
- The Quantum Spin Hall Effect: Theory and Experiment
- Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
- Strain-Based Room-Temperature Non-Volatile MoTe Ferroelectric Phase Change Transistor
- Topological Dirac states beyond orbitals for silicene on SiC(0001) surface
- Huge out-of-plane piezoelectric response in ferromagnetic monolayer NiClI
- Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response