Two-Dimensional Ferroelastic Topological Insulators in Single-Layer Janus Transition Metal Dichalcogenides MSSe (M=Mo, W)

Abstract

Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe (M=Mo, W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in nonvolatile memory devices. Moreover, their topological phases harbor sizeable nontrivial band gaps, which supports the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multi-purpose and controllable devices.

References in corpus (8)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Topological Insulators with Inversion Symmetry
• WannierTools: An open-source software package for novel topological materials
• Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
• Nonlocal edge state transport in the quantum spin Hall state
• Novel Two-Dimensional Silicon Dioxide with in-plane Negative Poisson's Ratio
• Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride

Cited by in corpus (7)

• Raman spectrum of Janus transition metal dichalcogenide monolayers WSSe and MoSSe
• Prediction of Intrinsic Triferroicity in Two-Dimensional Lattice
• Structural transition, metallization and superconductivity in quasi 2D layered PdS${}_2$ under compression
• Chemical bonding and Born charge in 1T-HfS${}_2$
• Antiferromagnetic and Electric Polarized States in Two-Dimensional Janus Semiconductor Fe2Cl3I3
• Crystal growth, characterization and electronic band structure of TiSeS
• Two-dimensional ferroelastic semiconductors in Nb2SiTe4 and Nb2GeTe4 with promising electronic properties