Evidence of shallow bandgap in ultra-thin 1T'-MoTe2 via infrared spectroscopy
arXiv:2101.10525 · doi:10.1103/PhysRevB.101.235434
Abstract
Although van der Waals (vdW) layered MoS2 shows the phase transformation from the semiconducting 2H-phase to the metallic 1T-phase through chemical lithium intercalation, vdW MoTe2 is thermodynamically reversible between the 2H- and 1T'-phases, and can be further transformed by energetics, laser irradiation, strain or pressure, and electrical doping. Here, thickness- and temperature-dependent optical properties of 1T'-MoTe2 thin films grown by chemical vapor depsition are investigated via Fourier-transformed infrared spectroscopy. An optical gap of 28 +/- 2 meV in a 3-layer (or 2 nm) thick 1T'-MoTe2 is clearly observed at a low temperature region below 50K. No discernible optical bandgap is observed in samples thicker than ~4 nm. The observed thickness-dependent bandgap results agree with the measured dc resistivity data; the thickness-dependent 1T'-MoTe2 clearly demonstrates the metal-semiconductor transition at a crossover below the 2 nm-thick sample.
arXiv comment18 pages, 4 figures
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