Misfit layer compounds: a platform for heavily-doped two-dimensional transition metal dichalcogenides
arXiv:2010.12314 · doi:10.1002/adfm.202007706
Abstract
Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric double-layer field-effect transistors (FET). However, for the case of single layer NbSe, FET doping is limited to cm, while a somewhat larger charge injection can be obtained via deposition of K atoms. Here, by performing ARPES, STM, quasiparticle interference measurements, and first principles calculations we show that a misfit compound formed by sandwiching NbSe and LaSe layers behaves as a NbSe single layer with a rigid doping of electrons per Nb atom or cm. Due to this huge doping, the charge density wave is replaced by a order with very short coherence length. As a tremendous number of different misfit compounds can be obtained by sandwiching TMDs layers with rock salt or other layers, our work paves the way to the exploration of heavily doped 2D TMDs over an unprecedented wide range of doping.
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- Misfit Layered Compounds: Unique, Tunable Heterostructured Materials with Untapped Properties
- Misfit layer compounds as ultra-tunable field effect transistors: from charge transfer control to emergent superconductivity
- Protection of Ising spin-orbit coupling in bulk misfit superconductors
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