52 citations · 250 across the 20 of their papers we have counts for
20 papers
Ultrafast dynamics of excitons in black phosphorus
Geoffroy Kremer, Juan F. P. Mosquera, Joël Morf +9
Excitons are key quasiparticles determining the optical properties of solids. As such, they can be utilized to coherently control the electronic structure of materials using optica…
Mexican hat-like valence band dispersion and quantum confinement in rhombohedral ferroelectric alpha-In2Se3
Geoffroy Kremer, Aymen Mahmoudi, Meryem Bouaziz +9
Two-dimensional (2D) ferroelectric (FE) materials offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them,…
Revealing electronic correlations in YNiBC using photoemission spectroscopy
Aki Pulkkinen, Geoffroy Kremer, Vladimir N. Strocov +3
We present a combined density functional theory (DFT), one-step model of photoemission, and soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) study of the electronic…
Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis +11
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over mo…
Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature
Frédéric Chassot, Aki Pulkkinen, Geoffroy Kremer +8
The ferroelectric semiconductor -SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-…
Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride
Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer +9
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low…
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-InSe
Geoffroy Kremer, Aymen Mahmoudi, Adel M'Foukh +11
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among th…
Carrier-Density Control of the Quantum-Confined 1-TiSe Charge-Density-Wave
T. Jaouen, A. Pulkkinen, M. Rumo +9
Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schrödinger calculations, we demonstrate that potassium (K) atoms…
Protection of Ising spin-orbit coupling in bulk misfit superconductors
Tomas Samuely, Darshana Wickramaratne, Martin Gmitra +16
Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer mate…
Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric -GeTe(111)
Geoffroy Kremer, Julian Maklar, Laurent Nicolaï +11
Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, -GeTe(111) is a non-centrosymmetric ferroelectr…
Electron-momentum dependence of electron-phonon coupling underlies dramatic phonon renormalization in YNiBC
Philipp Kurzhals, Geoffroy Kremer, Thomas Jaouen +12
Electron-phonon coupling, i.e., the scattering of lattice vibrations by electrons and vice versa, is ubiquitous in solids and can lead to emergent ground states such as superconduc…
Insensitivity of the striped charge-orders in IrTe to alkali surface doping implies their structural origin
M. Rumo, A. Pulkkinen, B. Salzmann +7
We present a combined angle-resolved photoemission spectroscopy and low-energy electron diffraction (LEED) study of the prominent transition metal dichalcogenide IrTe upon pota…
Ultrafast Dynamics of the Surface Photovoltage in Potassium Doped Black Phosphorus
G. Kremer, M. Rumo, C. Yue +6
Black phosphorus is a quasi-two-dimensional layered semiconductor with a narrow direct band gap of 0.3 eV. A giant surface Stark effect can be produced by the potassium doping of b…
Observation of a uniaxial strain-induced phase transition in the 2D topological semimetal IrTe
C. W. Nicholson, M. Rumo, A. Pulkkinen +12
Strain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over materia…
Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
G. Kremer, J. C. Alvarez-Quiceno, T. Pierron +11
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, o…
Misfit layer compounds: a platform for heavily-doped two-dimensional transition metal dichalcogenides
Raphaël T. Leriche, Alexandra Palacio-Morales, Marco Campetella +14
Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical p…
Unveiling the complete dispersion of the giant Rashba split surface states of ferroelectric -GeTe(111) by alkali doping
G. Kremer, T. Jaouen, B. Salzmann +9
-GeTe(111) is a non-centrosymmetric ferroelectric material, for which a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface. The…
Examining the surface phase diagram of IrTe with photoemission
M. Rumo, C. W. Nicholson, A. Pulkkinen +13
In the transition metal dichalcogenide IrTe, low-temperature charge-ordered phase transitions involving Ir dimers lead to the occurrence of stripe phases of different periodici…
Unveiling the Semimetallic Nature of 1-TiSe by Doping its Charge Density Wave
T. Jaouen, M. Rumo, B. Hildebrand +10
The semimetallic or semiconducting nature of the transition metal dichalcogenide 1-TiSe remains under debate after many decades mainly due to the fluctuating nature of its 2…
Electronic band structure of ultimately thin silicon oxide on Ru(0001)
G. Kremer, J. C. Alvarez-Quiceno, S. Lisi +12
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectri…