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Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure
Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis +11
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over mo…
Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature
Frédéric Chassot, Aki Pulkkinen, Geoffroy Kremer +8
The ferroelectric semiconductor -SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-…
Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride
Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer +9
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low…
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-InSe
Geoffroy Kremer, Aymen Mahmoudi, Adel M'Foukh +11
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among th…
Carrier-Density Control of the Quantum-Confined 1-TiSe Charge-Density-Wave
T. Jaouen, A. Pulkkinen, M. Rumo +9
Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schrödinger calculations, we demonstrate that potassium (K) atoms…
Protection of Ising spin-orbit coupling in bulk misfit superconductors
Tomas Samuely, Darshana Wickramaratne, Martin Gmitra +16
Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer mate…