Thermoelectric effects in topological crystalline insulators

Abstract

We investigate the electrical conductivity and thermoelectric effects in topological crystalline insulators in the presence of short- and long-range impurity interactions. We employ the generalized Boltzmann formalism for anisotropic Fermi surface systems. The conductivity exhibits a local minimum as doping varies owing to the Van Hove singularity in the density of states originated from the saddle point in the surface states band structure. Suppression of the interband scattering of the charge carriers at high-energy Dirac points results in a maximum in the electrical conductivity. Whenever the Fermi level passes an extremum in the conductivity, Seebeck coefficient changes sign. In addition, it is revealed that profound thermoelectric effects can be attained around these extrema points.

arXiv comment8 pages, 6 figures

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• From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films
• Misfit layer compounds: a platform for heavily-doped two-dimensional transition metal dichalcogenides
• On Behind the Physics of the Thermoelectricity of Topological Insulators
• Gate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires
• Thermoelectric transport properties of borophane
• Anomalous thermoelectric properties of a Floquet topological insulator with spin momentum non-orthogonality