Electron mobility of a two-dimensional electron gas at the interface of SrTiO and LaAlO
arXiv:1604.04034 · doi:10.1103/PhysRevB.93.235306
Abstract
We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO/SrTiO following a three band Boltzmann approach at low temperature, where carrier-charged impurity scattering process is assumed to be dominant. We explain the anisotropic characteristic of the dielectric function, which is a consequence of elliptical bands close to Fermi surface. The screening effect, which weakens the long-range Coulomb interaction of the electron-impurity is considered within the random phase approximation. Working at carrier densities high enough to neglect the spin-orbit induced splitting of the bands, we find that the mobility varies inversely with the cubic power of the carrier density () in good agreement with the experimental results. We also investigate the role of variable dielectric constant of SrTiO, the multiband nature of the system and interband interactions in exploring this result.
arXiv comment7 pages, 5 figures
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- Plasmons at the LaAlO/SrTiO interface and Graphene-LaAlO/SrTiO double layer
- Temperature-Dependent Band Structure of SrTiO Interfaces
- Orbital and spin order in oxide two-dimensional electron gases
- Magnetoresistance in Noncentrosymmetric Two-dimensional Systems
- Magnetotransport of a 2DEG with anisotropic Rashba interaction at the LaAlO/SrTiO interface