From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films

Abstract

SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the high-symmetry rocksalt structure--in which its intrinsic electric dipole is quenched--this material develops metallic surface bands, but in its rhombic ground-state configuration--that hosts a non-zero spontaneous electric dipole--the crystalline symmetry is lowered and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 ALs are examined on freestanding samples, to which atomic layers were gradually added. 4 AL SnTe films are antiferroelectrically-coupled, while thicker freestanding SnTe films are ferroelectrically-coupled. The electronic band gap reduces its magnitude in going from 2 ALs to 40 ALs but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.

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Cited by in corpus (9)

• Colloquium: Physical properties of group-IV monochalcogenide monolayers
• Interlayer Sliding-Induced Intralayer Ferroelectric Switching in Bilayer Group-IV Monochalcogenides
• Intrinsic persistent spin helix in two-dimensional group-IV monochalcogenide MX (M : Sn, Ge; X: S, Se, Te) monolayer
• Ultrathin SnTe films as a route towards all-in-one spintronics devices
• Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds
• Large band splitting with tunable spin polarization in two-dimensional ferroelectric GaXY (X= Se, Te; Y= Cl, Br, I) family
• Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe
• Tuning energy barriers by doping 2D group-IV monochalcogenides
• Two-atom-thin topological crystalline insulators lacking out of plane inversion symmetry