Evolution of Raman spectra in MoWTe alloys
arXiv:1703.10985 · doi:10.1088/2053-1583/aa7a32
Abstract
The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T semimetallic phase at high temperatures. Alloying MoTe with WTe reduces the energy barrier between these two phases, while also allowing access to the T Weyl semimetal phase. The MoWTe alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe-WTe system. We combine polarization-resolved Raman spectroscopy with X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study MoWTe alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T, and T structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe-WTe system, including single-phase 2H, 1T, and T regions, as well as a two-phase 1T + T region. Disorder arising from compositional fluctuations in MoWTe alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T-MoTe mode and the enhancement of a double-resonance Raman process in 2H-MoWTe alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in MoWTe alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.
18 pages, 5 figures, 1 table
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- Mechanical control of crystal symmetry and superconductivity in Weyl semimetal MoTe
- Reversible Electrochemical Phase Change in Monolayer to Bulk MoTe2 by Ionic Liquid Gating
- Tailoring the Phase Transition and Electron-Phonon Coupling in 1T'-MoTe2 by Charge Doping: A Raman Study
- Efficient method for calculating Raman spectra of solids with impurities and alloys and its application to two-dimensional transition metal dichalcogenides
- Enhancement of the superconducting transition temperature by Re doping in Weyl semimetal MoTe
- T to 1T structural phase transition in WTe Weyl semimetal
- Origin of magnetoresistance suppression in thin -MoTe
- Appearance of T phase across the T-1T phase boundary in Weyl semimetal MoTe
- Superconducting properties of MoTe from the anisotropic Migdal-Eliashberg theory
- Pressure-induced creation and annihilation of Weyl points in Td- and 1T"-Mo0.5W0.5Te2
- Topological phase transition in MoTe: A Review
- Evolution of the structural transition in MoWTe
- Raman spectrum of 1T'-WTe2 under tensile strain: A first-principles prediction
- Superconductivity in doped Weyl semimetal MoIrTe with broken inversion symmetry
- Large-area synthesis of continuous two-dimensional MoTexSe2-x alloy films by chemical vapor deposition
- Valley Phenomena in the Candidate Phase Change Material WSeTe
- Polarization-resolved broadband time-resolved optical spectroscopy for complex materials: application to the case of MoTe polytypes
- Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution
- Quantum oscillation study of the large magnetoresistance in Mo substituted WTe single crystals
- Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
- Equilibrium Phase Diagrams of Isostructural and Heterostructural Two-Dimensional Alloys from First Principles
- Controlled synthesis of MoxW1-xTe2 atomic layers with emergent quantum states