An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices

Abstract

Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Furthermore, proof-of-concept devices are usually fabricated from micro-meter size flakes, requiring microscopy techniques to characterize them. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically-thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, Raman, absorption and PL spectroscopy in one single set-up. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs) and Si. The performance and resolution of each individual measurement technique is found to be equivalent to that of commercially available instruments. Contrary to nowadays commercial systems, a significant advantage of the developed instrument is that for the first time the integration of a wide range of complementary opto-electronic and spectroscopy characterization techniques is demonstrated in a single compact unit.

arXiv commentTo appear in Review of Scientific Instruments (2017). 29 pages, 9 figures

References in corpus (8)

• Graphene: Status and Prospects
• Raman spectroscopy as a versatile tool for studying the properties of graphene
• Measurement of the Optical Conductivity of Graphene
• Strain engineering in semiconducting two-dimensional crystals
• Photocurrent measurements of supercollision cooling in graphene
• Near-field photocurrent nanoscopy on bare and encapsulated graphene
• Hot-carrier photocurrent effects at graphene-metal interfaces
• Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene

Cited by in corpus (5)

• Graphene-based light sensing: fabrication, characterisation, physical properties and performance
• Strain-engineered inverse charge-funnelling in layered semiconductors
• Strain-engineering of twist-angle in graphene/hBN superlattice devices
• Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite
• Novel circuit design for high-impedance and non-local electrical measurements of two-dimensional materials