Stability of germanene under tensile strain

Abstract

The stability of germanene under biaxial tensile strain and the accompanying modifications of the electronic properties are studied by density functional theory. The phonon spectrum shows that up to $16\%$ strain the germanene lattice is stable, where the Dirac cone shifts towards higher energy and hole-doped Dirac states are achieved. The latter is due to weakening of the Ge-Ge bonds and reduction of the s-p hybridization. Our calculated Grüneisen parameter shows a similar dependence on the strain as reported for silicene (which is different from that of graphene).

11 pages, 3 figures, and 1 Table

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• The electronic properties of graphene
• Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
• All-graphene integrated circuits via strain engineering
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Cited by in corpus (8)

• Strain engineering in semiconducting two-dimensional crystals
• Tuning the Structural, Electronic, and Magnetic Properties of Germanene by the Adsorption of 3$d$ Transition Metal Atoms
• Current developments in silicene and germanene
• Band gap modulation in polythiophene and polypyrrole-based systems
• Electrically Engineered Band Gap in Two-Dimensional Ge, Sn, and Pb: A First-Principles and Tight-Binding Approach
• Effects of spin-orbit coupling and magnetic field on electronic properties of Germanene structure
• A tight-binding investigation of biaxial strain induced topological phase transition in GeCH${}_3$
• Exploring charge density distribution and electronic properties of hybrid organic-germanium layers