A tight-binding investigation of biaxial strain induced topological phase transition in GeCH
arXiv:1707.04213 · doi:10.1103/PhysRevB.96.085441
Abstract
We propose a tight-binding (TB) model, that includes spin-orbit coupling (SOC), to describe the electronic properties of methyl-substituted germanane (GeCH). This model gives an electronic spectrum in agreement with first principle results close to the Fermi level. Using the formalism, we show that a topological phase transition from a normal insulator (NI) to a quantum spin Hall (QSH) phase occurs at 11.6\% biaxial tensile strain. The sensitivity of the electronic properties of this system on strain, in particular its transition to the topological insulating phase, makes it very attractive for applications in strain sensors and other microelectronic applications.
arXiv comment8 pages, 10 figures
References in corpus (17)
- The electronic properties of graphene
- Topological Insulators
- Topological insulators and superconductors
- Quantum Spin Hall Effect in Graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Topological Insulators in Three Dimensions
- Control of graphene's properties by reversible hydrogenation
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Spin-orbit gap of graphene: First-principles calculations
- Time Reversal Polarization and a Z_2 Adiabatic Spin Pump
- Topological Phases in Two-Dimensional Materials: A Brief Review
- Valley-Polarized Quantum Anomalous-Hall Effects in Silicene
- Functionalized Germanene as a Prototype of Large-Gap Two-Dimensional Topological Insulators
- Quantum spin Hall effect in three dimensional materials: Lattice computation of Z topological invariants and its application to Bi and Sb
- Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene
- Stability of germanene under tensile strain
- Explicit Gauge Fixing for Degenerate Multiplets: A Generic Setup for Topological Orders