Tunable biaxial strain device for low dimensional materials

Abstract

Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain where there is often a trade-off between maximum strain and uniformity, reversibility and device size. We present a compact device that allows the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H-MoS${}_2$ to strain by Raman spectroscopy.

10 pages, 4 figures

References in corpus (5)

• Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
• The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2
• Biaxial versus uniaxial strain tuning of single-layer MoS${}_2$
• Strain Engineering a $4a\times \sqrt{3}a$ Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe${}_2$
• Strain-tuning of nematicity and superconductivity in single crystals of FeSe

Cited by in corpus (3)

• Giant atomic swirl in graphene bilayers with biaxial heterostrain
• Measurements of absolute bandgap deformation-potentials of optically-bright bilayer WSe${}_2$
• Compact computer controlled biaxial tensile device for low-temperature transport measurements of layered materials