Biaxial strain tuning of interlayer excitons in bilayer MoS2

Abstract

We show how the excitonic features of biaxial MoS2 flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 +- 2) meV/% and (-45 +- 2) meV/% respectively, which are larger than those found for single-layer MoS2. Interestingly, the interlayer exciton feature also shifts upon biaxial strain but with a gauge factor that is systematically larger than that found for the A exciton, (-48 +- 4) meV/%. We attribute this larger gauge factor for the interlayer exciton to the strain tunable van der Waals interaction due to the Poisson effect (the interlayer distance changes upon biaxial strain).

arXiv comment3 figures in the main text, 14 figures in the Supp. Info

References in corpus (24)

• Atomically thin MoS2: A new direct-gap semiconductor
• Control of valley polarization in monolayer MoS2 by optical helicity
• Valley polarization in MoS2 monolayers by optical pumping
• Observation of tightly bound trions in monolayer MoS2
• MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
• Bandgap Engineering of Strained Monolayer and Bilayer MoS2
• Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
• Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
• Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
• Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
• Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures
• Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
• Optical identification of atomically thin dichalcogenide crystals
• Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides
• Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
• Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain
• Control of biaxial strain in single-layer Molybdenite using local thermal expansion of the substrate
• Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure
• Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
• Strain-tunable van der Waals interactions in few-layer black phosphorus
• Interlayer excitons in bilayer MoS2 with strong oscillator strength up to room temperature
• Probing the inter-layer exciton physics in a MoS${}_2$/MoSe${}_2$/MoS${}_2$ van der Waals heterostructure
• Thickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials
• Fine structure of $\mathrm{K}$-excitons in multilayers of transition metal dichalcogenides

Cited by in corpus (8)

• Giant Stark splitting of an exciton in bilayer MoS${}_2$
• Microheater actuators as a versatile platform for strain engineering in 2D materials
• Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain
• Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning
• Enhanced Strain Transfer and Optoelectronic Performance in MoS2 Devices via Formvar Encapsulation
• Optical properties of monolayer, multilayer, and bulk BiI${}_3$ studied using time-dependent density functional theory
• Mechanical Detuning of Exciton-Phonon Resonance in WS2
• Strain Switching in van der Waals Heterostructures triggered by a Spin-Crossover Metal Organic Framework