21 citations · 64 across the 4 of their papers we have counts for
5 papers
Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
Yuan Fa, Agata Piacentini, Bart Macco +5
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS)-FETs, have gained significant attention for their potential for ultra…
Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers
Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun +9
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield…
Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics
Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini +14
Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges r…
Button Shear Testing for Adhesion Measurements of 2D Materials
Josef Schätz, Navin Nayi, Jonas Weber +13
Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak…
CVD Graphene Contacts for Lateral Heterostructure MoS Field Effect Transistors
Daniel S. Schneider, Leonardo Lucchesi, Eros Reato +12
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transi…