Contact Resistance Optimization in MoS${}_2$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Yuan Fa, Agata Piacentini, Bart Macco +5

Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${}_2$)-FETs, have gained significant attention for their potential for ultra…