Transfer of Graphene with Protective Oxide Layers

Abstract

Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by Atomic Deposition Layer (ALD) on the graphene right after the growth stage on Cu foils. One can further aid the oxide-graphene transfer by depositing a very thin polymer layer on top of the composite (much thinner than the usual thickness) following by a more aggressive polymeric removal methods, thus leaving the graphene intact. We report on the nucleation growth process of alumina and hafnia films on the graphene, their resulting strain and on their optical transmission. We suggest that hafnia is a better oxide to coat the graphene than alumina in terms of uniformity and defects.

arXiv comment13 pgs, 13 figures

References in corpus (6)

• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
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• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
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Cited by in corpus (1)

• The effect of periodic spatial perturbations on the emission rates of quantum dots near graphene platforms