Vertical Graphene Base Transistor

Abstract

We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines.

arXiv comment9 pages, 3 figures; IEEE Electron Device Letters, Vol.33, Issue 5, (2012)

References in corpus (5)

• Graphene Photonics and Optoelectronics
• Graphene Nano-Ribbon Electronics
• A Graphene Field-Effect Device
• Ultimate RF Performance Potential of Carbon Electronics
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