264 citations · 1.1k across the 10 of their papers we have counts for
10 papers
Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs
C. A. Paz de Araujo, Jolanta Celinska, Chris R. McWilliams +9
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We h…
Improving Electric Contacts to Two-Dimensional Semiconductors
Saurabh V. Suryavanshi, Blanka Magyari-Kope, Paul Lim +4
Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semicon…
Scaling Theory of Two-Dimensional Field Effect Transistors
Saurabh V. Suryavanshi, Chris D. English, H. -S. P. Wong +1
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by th…
High Current Density in Monolayer MoS Doped by AlO
Connor J. McClellan, Eilam Yalon, Kirby K. H. Smithe +2
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, w…
Reduced Thermal Conductivity of Supported and Encased Monolayer and Bilayer MoS
Alexander J. Gabourie, Saurabh V. Suryavanshi, Amir Barati Farimani +1
Electrical and thermal properties of atomically thin two-dimensional (2D) materials are affected by their environment, e.g. through remote phonon scattering or dielectric screening…
Thermal Boundary Conductance of Two-Dimensional Interfaces
Saurabh V. Suryavanshi, Alexander J. Gabourie, Amir Barati Farimani +1
Understanding the thermal properties of two-dimensional (2D) materials and devices is essential for thermal management of 2D applications. Here we perform molecular dynamics simula…
Temperature Dependent Thermal Boundary Conductance of Monolayer MoS by Raman Thermometry
Eilam Yalon, Özgür Burak Aslan, Kirby K. H. Smithe +9
The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-d…
Energy Dissipation in Monolayer MoS Electronics
Eilam Yalon, Connor J. McClellan, Kirby K. H. Smithe +9
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D)…
S2DS: Physics-Based Compact Model for Circuit Simulation of Two-Dimensional Semiconductor Devices Including Non-Idealities
Saurabh V. Suryavanshi, Eric Pop
We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approac…
Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices
Kirby K. H. Smithe, Chris D. English, Saurabh V. Suryavanshi +1
We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier den…