264 citations · 1.1k across the 10 of their papers we have counts for
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cond-mat.mes-hall2016★ 104 cited
S2DS: Physics-Based Compact Model for Circuit Simulation of Two-Dimensional Semiconductor Devices Including Non-Idealities
Saurabh V. Suryavanshi, Eric Pop
We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approac…
cond-mat.mtrl-sci2016★ 163 cited
Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices
Kirby K. H. Smithe, Chris D. English, Saurabh V. Suryavanshi +1
We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier den…