548 citations · 548 across the 3 of their papers we have counts for
3 papers
Improving Electric Contacts to Two-Dimensional Semiconductors
Saurabh V. Suryavanshi, Blanka Magyari-Kope, Paul Lim +4
Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semicon…
Scaling Theory of Two-Dimensional Field Effect Transistors
Saurabh V. Suryavanshi, Chris D. English, H. -S. P. Wong +1
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by th…
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
Chris D. English, Gautam Shine, Vincent E. Dorgan +2
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts wit…