548 citations · 711 across the 4 of their papers we have counts for
5 papers
Improving Electric Contacts to Two-Dimensional Semiconductors
Saurabh V. Suryavanshi, Blanka Magyari-Kope, Paul Lim +4
Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semicon…
Scaling Theory of Two-Dimensional Field Effect Transistors
Saurabh V. Suryavanshi, Chris D. English, H. -S. P. Wong +1
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by th…
Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices
Kirby K. H. Smithe, Chris D. English, Saurabh V. Suryavanshi +1
We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier den…
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
Chris D. English, Gautam Shine, Vincent E. Dorgan +2
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts wit…
Observation of non-sinusoidal current-phase relation in graphene Josephson junctions
Christopher English, David Hamilton, Cesar Chialvo +3
We present direct measurements of the current-phase relation for lateral Josephson junctions with a graphene barrier, obtained by a phase-sensitive SQUID interferometry technique.…