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cond-mat.mes-hall2021
Improving Electric Contacts to Two-Dimensional Semiconductors
Saurabh V. Suryavanshi, Blanka Magyari-Kope, Paul Lim +4
Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semicon…
cond-mat.mes-hall2021
Scaling Theory of Two-Dimensional Field Effect Transistors
Saurabh V. Suryavanshi, Chris D. English, H. -S. P. Wong +1
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by th…