Flicker Noise in Two-Dimensional Electron Gas
arXiv:2104.14402 · doi:10.1088/1402-4896/ac3c11
Abstract
Using the method developed in a recent paper (Euro. Phys. J. B 92.8 (2019): 1-28) we consider noise in two-dimensional electron gas (2DEG). The electron coherence length of the system is considered as a basic parameter for discretizing the space, inside which the dynamics of electrons is described by quantum mechanics, while for length scales much larger than it the dynamics is semi-classical. For our model, which is based on the Thomas-Fermi-Dirac approximation, there are two control parameters: temperature and the disorder strength (). Our Monte Carlo studies show that the system exhibits noise related to the electronic avalanche size, which can serve as a model for describing the experimentally observed flicker noise in 2DEG. The power spectrum of our model scales with frequency with an exponent in the interval . We numerically show that the electronic avalanches are scale-invariant with power-law behaviors in and out of the metal-insulator transition line.
References in corpus (17)
- Metallic behavior and related phenomena in two dimensions
- Review of the Low-Frequency 1/f Noise in Graphene Devices
- Indication of the ferromagnetic instability in a dilute two-dimensional electron system
- Percolation-type description of the metal-insulator transition in two dimensions
- Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors
- Direct Probing of 1/f Noise Origin with Graphene Multilayers: Surface vs. Volume
- 2D Metal-Insulator transition as a percolation transition
- Dilute electron gas near the metal-insulator transition in two dimensions
- Scaling of the magnetoconductivity of silicon MOSFET's: evidence for a quantum phase transition in two dimensions
- Onset of Glassy Dynamics in a Two-Dimensional Electron System in Silicon
- Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers
- On the Cooling of Electrons in a Silicon Inversion Layer
- Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs
- Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions
- Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures
- Percolation transition in two dimensional electron gas: A quantum cellular automaton model
- Observation of geometry dependent conductivity in two-dimensional electron systems