152 citations · 645 across the 6 of their papers we have counts for
6 papers
High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics
C. Jiang, S. L. Rumyantsev, R. Samnakay +2
The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as…
Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors
R. Samnakay, C. Jiang, S. L. Rumyantsev +2
We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuati…
Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources
S. Rumyantsev, G. Liu, W. Stillman +2
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special atte…
Terahertz Response of Field-Effect Transistors in Saturation Regime
T. A. Elkhatib, V. Yu. Kachorovskii, W. J. Stillman +3
We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear inc…
Low-noise top-gate graphene transistors
G. Liu, W. Stillman, S. Rumyantsev +3
We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the to…
Flicker Noise in Bilayer Graphene Transistors
Q. Shao, G. Liu, D. Teweldebrhan +4
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron b…