152 citations · 645 across the 6 of their papers we have counts for
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High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics
C. Jiang, S. L. Rumyantsev, R. Samnakay +2
The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as…
Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources
S. Rumyantsev, G. Liu, W. Stillman +2
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special atte…
Low-noise top-gate graphene transistors
G. Liu, W. Stillman, S. Rumyantsev +3
We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the to…
Flicker Noise in Bilayer Graphene Transistors
Q. Shao, G. Liu, D. Teweldebrhan +4
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron b…