Low-noise top-gate graphene transistors

Abstract

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter below 2 x 10^-3. The analysis of the noise spectral density dependence on the top and bottom gate biases helped us to elucidate the noise sources in these devices and develop a strategy for the electronic noise reduction. The obtained results are important for all proposed graphene applications in electronics and sensors.

9 pages, 4 figures

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• Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise
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• Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
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• Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors
• Observation of the "Memory Steps" in Graphene at Elevated Temperatures
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• Limits on the Bolometric response of Graphene due to flicker noise
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• Exact decoherence dynamics of $1/f$ noise
• Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
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• Low-Frequency Current Fluctuations in Graphene-like Exfoliated Thin-Films of Topological Insulators
• Input referred low-frequency noise analysis for single-layer graphene FETs
• Optical Properties of Chiral Graphene Nanoribbons: a First Principal Study
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