143 citations · 143 across the 1 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2010★ 143 cited
Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources
S. Rumyantsev, G. Liu, W. Stillman +2
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special atte…
physics.ins-det2010
Terahertz Response of Field-Effect Transistors in Saturation Regime
T. A. Elkhatib, V. Yu. Kachorovskii, W. J. Stillman +3
We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear inc…
cond-mat.mtrl-sci2009
Low-noise top-gate graphene transistors
G. Liu, W. Stillman, S. Rumyantsev +3
We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the to…