Triple-Mode Single-Transistor Graphene Amplifier and Its Applications

Abstract

In this article, we propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Dimensional crossover of thermal transport in few-layer graphene materials
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Graphene-on-Sapphire and Graphene-on-Glass: Raman Spectroscopy Study
• Low-noise top-gate graphene transistors
• Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources
• Flicker Noise in Bilayer Graphene Transistors