Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

Abstract

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${}_3$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.

arXiv commentAccepted version of paper number 38-2 presented at the 67th Annual IEEE International Electron Devices Meeting (IEDM) on 15 December 2021

References in corpus (4)

• Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor
• Ab-initio study of gap opening and screening effects in gated bilayer graphene
• Charge transport in dual gated bilayer graphene with Corbino geometry
• Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect

Cited by in corpus (3)

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• Tailoring Robust Quantum Anomalous Hall Effect via Entropy-Engineering
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