Hydrodynamic magnetoresistance in graphene Corbino devices

Abstract

We study hydrodynamic electron magnetotransport in graphene devices. We show that in these systems a distinct mechanism of magnetoresistance appears, which is absent in systems with Galilean-invariant electron liquid. The resulting magnetoresistance depends on the intrinsic conductivity and viscosity of the electron liquid, and becomes especially pronounced near charge neutrality. We obtain analytic expressions for magnetoransport coefficients of Corbino devices, and obtain estimates for the electrical and thermal magnetoresistances for monolayer and bilayer systems at charge neutrality. Magnetoresistance becomes strong (of order 100%) at relatively weak fields, at which the kinetic coefficients of the electron liquid are practically unaffected by the magnetic field.

arXiv comment6 pages, 3 figures

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Cited by in corpus (11)

• Corbino magnetoresistance in neutral graphene
• Current Noise of Hydrodynamic Electrons
• Giant magnetoresistance in weakly disordered non-Galilean invariant conductors
• Hydrodynamics of the electronic Fermi liquid: a pedagogical overview
• Anomalous Electronic Transport in High Mobility Corbino Rings
• Non-monotonic temperature dependence of electron viscosity and crossover to high-temperature universal viscous fluid in monolayer and bilayer graphene
• Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings
• Fluctuation-induced giant magnetoresistance in charge-neutral graphene
• Spin-caloric resistance of Dirac plasma in a graphene Corbino device
• Corbino-Enhanced Supersonic Acoustic-Emission Threshold in a GaAs Two-Dimensional Electron System
• Tunable viscous layers in Corbino geometry using density junctions