Electronic structure of graphene: (nearly) free electrons bands vs. tight-binding bands

Abstract

In our previous paper (Phys. Rev. B {\bf 89}, 165430 (2014)) we have found that in graphene, in distinction to the four occupied bands, which can be described by the simple tight-binding model (TBM) with four atomic orbitals per atom, the two lowest lying at the $\Gamma$-point unoccupied bands (one of them of a $\sigma$ type and the other of a $\pi$ type) can not be described by such model. In the present work we suggest a minimalistic model for these two bands, based on (nearly) free electrons model (FEM), which correctly describes the symmetry of these bands, their dispersion law and their localization with respect to the graphene plane.

LaTeX, 8 pages, 18 eps figures. As accepted for publication in PSSb

References in corpus (6)

• The electronic properties of graphene
• Potential Energy Landscape for hot electrons in periodically nanostructured graphene
• Phonon mediated tunneling into graphene
• Scattering resonances in graphene
• Energy bands in graphene: Comparison between the tight-binding model and {\it ab initio} calculations
• Mapping Unoccupied Electronic States of Freestanding Graphene by Angle-Resolved Low-Energy Electron Transmission

Cited by in corpus (3)

• Suppression of electron scattering resonances in graphene by quantum dots
• Fano physics behind the N-resonance in graphene
• Symmetry of electron bands in graphene: (nearly) free electron vs. tight-binding