Infrared spectroscopy of hole doped ABA-stacked trilayer graphene

Abstract

Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the π-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.

6 pages, 6 figures Corrected sign of fig 3 and visibilty of fig 6

References in corpus (9)

• Two Dimensional Atomic Crystals
• Universal dynamical conductance in graphite
• Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
• Electronic states and Landau levels in graphene stacks
• Band Structure of ABC-Stacked Graphene Trilayers
• Atomic Hole Doping of Graphene
• Dependence of band structures on stacking and field in layered graphene
• Magneto-optical properties of multilayer graphenes
• Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene

Cited by in corpus (3)

• Interaction-induced insulating state in thick multilayer graphene
• Influence of electric and magnetic fields and $\sigma$-edge bands on the electronic and optical spectra of graphene nanoribbons
• Imaging Stacking-Dependent Surface Plasmon Polaritons in Trilayer Graphene