Infrared spectroscopy of hole doped ABA-stacked trilayer graphene

Abstract

Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the π-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.

arXiv comment6 pages, 6 figures Corrected sign of fig 3 and visibilty of fig 6

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Cited by in corpus (6)

• Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS${}_2$
• Interaction-induced insulating state in thick multilayer graphene
• Tunable Infrared Phonon Anomalies in Trilayer Graphene
• Optical conductivity of ABA stacked graphene trilayer: mid-IR resonance due to band nesting
• Influence of electric and magnetic fields and $\sigma$-edge bands on the electronic and optical spectra of graphene nanoribbons
• Imaging Stacking-Dependent Surface Plasmon Polaritons in Trilayer Graphene