Graphite and Hexagonal Boron-Nitride Possess the Same Interlayer Distance. Why?
arXiv:1109.3813 · doi:10.1021/ct200880m
Abstract
Graphite and hexagonal boron nitride (h-BN) are two prominent members of the family of layered materials possessing a hexagonal lattice. While graphite has non-polar homo-nuclear C-C intra-layer bonds, h-BN presents highly polar B-N bonds resulting in different optimal stacking modes of the two materials in bulk form. Furthermore, the static polarizabilities of the constituent atoms considerably differ from each other suggesting large differences in the dispersive component of the interlayer bonding. Despite these major differences both materials present practically identical interlayer distances. To understand this finding, a comparative study of the nature of the interlayer bonding in both materials is presented. A full lattice sum of the interactions between the partially charged atomic centers in h-BN results in vanishingly small monopolar electrostatic contributions to the interlayer binding energy. Higher order electrostatic multipoles, exchange, and short-range correlation contributions are found to be very similar in both materials and to almost completely cancel out by the Pauli repulsions at physically relevant interlayer distances resulting in a marginal effective contribution to the interlayer binding. Further analysis of the dispersive energy term reveals that despite the large differences in the individual atomic polarizabilities the hetero-atomic B-N C6 coefficient is very similar to the homo-atomic C-C coefficient in the hexagonal bulk form resulting in very similar dispersive contribution to the interlayer binding. The overall binding energy curves of both materials are thus very similar predicting practically the same interlayer distance and very similar binding energies.
18 pages, 5 figures, 2 tables
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Two Dimensional Atomic Crystals
- Boron nitride substrates for high-quality graphene electronics
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Hunting for Monolayer Boron Nitride: Optical and Raman Signatures
- Magnetism in graphene nano-islands
- Metallic Graphene Nanodisks
- Half-metallic graphene nanodots
- Energy gap tuning in graphene on hexagonal boron nitride bilayer system
- Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description
- Edge Effects in Finite Elongated Graphene Nanoribbons
- Quantifying the Stacking Registry Matching in Layered Materials
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