Electron-hole collision-limited resistance of gapped graphene

Arseny Gribachov; Vladimir Vyurkov; Dmitry Svintsov

doi:10.1103/PhysRevB.109.085424

paper

Electron-hole collision-limited resistance of gapped graphene

arXiv:2312.05066 · doi:10.1103/PhysRevB.109.085424

Abstract

Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its evolution with induction of band gap $E_{g}$ is less explored. Here, we derive the functional dependence of electron-hole limited resistance of gapped graphene $ρ_{e h}$ on the ratio of gap and thermal energy $E_{g} / k T$ . At low temperatures and large band gaps, the resistance grows linearly with $E_{g} / k T$ , and possesses a minimum at $E_{g} \approx 2.5 k T$ . This contrast to the Arrhenius activation-type behaviour for intrinsic semiconductors. Introduction of impurities restores the Arrhenius law for resistivity at low temperatures and/or high doping densities. The hallmark of electron-hole collision effects in graphene resistivity at charge neutrality is the crossover between exponential and power-law resistivity scalings with temperature.

Electron-hole collision-limited resistance of gapped graphene

Abstract

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