Electron-hole collision-limited resistance of gapped graphene
arXiv:2312.05066 · doi:10.1103/PhysRevB.109.085424
Abstract
Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its evolution with induction of band gap is less explored. Here, we derive the functional dependence of electron-hole limited resistance of gapped graphene on the ratio of gap and thermal energy . At low temperatures and large band gaps, the resistance grows linearly with , and possesses a minimum at . This contrast to the Arrhenius activation-type behaviour for intrinsic semiconductors. Introduction of impurities restores the Arrhenius law for resistivity at low temperatures and/or high doping densities. The hallmark of electron-hole collision effects in graphene resistivity at charge neutrality is the crossover between exponential and power-law resistivity scalings with temperature.
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