Rectification in three-terminal graphene junctions
arXiv:1007.3924 · doi:10.1063/1.3464978
Abstract
Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change of the rectification sign. At a bias < 20mV and at a temperature below 4.2K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.
References in corpus (8)
- Electric Field Effect in Atomically Thin Carbon Films
- The Raman Fingerprint of Graphene
- Graphene: Status and Prospects
- Detection of Individual Gas Molecules Absorbed on Graphene
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- Temperature dependent transport in suspended graphene
- Gap theory of rectification in ballistic three-terminal conductors