Maskless laser processing of graphene
arXiv:1812.09839 · doi:10.1016/j.mee.2015.03.049
Abstract
Graphene on a SiO/Si substrate was removed by ultraviolet pulsed laser irradiation. Threshold laser power density to remove graphene depended on the graphene thickness. The mechanism is discussed using kinetic energy of thermal expansion of the substrate surface. Utilizing the thickness dependence, thickness (or layer-number) selective process for graphene is demonstrated. Maskless patterning of graphene using laser irradiation in the air is also demonstrated.
4 pages, 6 figures, The 40th International Conference on Micro and Nano Engineering (MNE2014), Lausanne, Switzerland, September 22-26, 2014
References in corpus (7)
- Electric Field Effect in Atomically Thin Carbon Films
- 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
- Ultrahigh electron mobility in suspended graphene
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Asymmetry gap in the electronic band structure of bilayer graphene
- Temperature dependent transport in suspended graphene
- Ultra-strong Adhesion of Graphene Membranes