activity
20042009
most citedThe Raman Fingerprint of Graphene

15k citations · 23.1k across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2009★ 473 cited

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

D. M. Basko, S. Piscanec, A. C. Ferrari

Raman spectroscopy is a fast, non-destructive means to characterize graphene samples. In particular, the Raman spectra show a significant dependence on doping. While the change in…

cond-mat.mtrl-sci2008★ 1.1k cited

Raman Spectroscopy of Graphene Edges

C. Casiraghi, A. Hartschuh, H. Qian +5

Graphene edges are of particular interest, since their chirality determines the electronic properties. Here we present a detailed Raman investigation of graphene flakes with well d…

cond-mat.mes-hall2008★ 291 cited

Phonon renormalisation in doped bilayer graphene

A. Das, B. Chakraborty, S. Piscanec +3

We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiab…

cond-mat.mtrl-sci2007

Temperature dependent phonon renormalization in metallic nanotubes

V. Scardaci, S. Piscanec, Michele Lazzeri +3

We measure the temperature dependence of the Raman spectra of metallic and semiconducting nanotubes. We show that the different trend in metallic tubes is due to phonon re-normaliz…

cond-mat.mtrl-sci2007★ 556 cited

Edge-functionalized and substitutional doped graphene nanoribbons: electronic and spin properties

F. Cervantes-Sodi, G. Csányi, S. Piscanec +1

Graphene nanoribbons are the counterpart of carbon nanotubes in graphene-based nanoelectronics. We investigate the electronic properties of chemically modified ribbons by means of…

cond-mat.mtrl-sci2007★ 3.6k cited

Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering

A. Das, S. Pisana, S. Piscanec +8

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-…