137 citations · 664 across the 13 of their papers we have counts for
13 papers
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
J. K. Zettler, C. Hauswald, P. Corfdir +5
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire n…
Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
David van Treeck, Johannes Ledig, Gregor Scholz +7
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting dio…
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Hanno Küpers, Ryan B. Lewis, Abbes Tahraoui +5
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diamet…
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
Hanno Küpers, Abbes Tahraoui, Ryan B. Lewis +6
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations…
Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials
Kirill V. Mitrofanov, Paul Fons, Kotaro Makino +16
Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-ch…
Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN
Hong Li, Lutz Geelhaar, Henning Riechert +1
Crystal morphologies are important for the design and functionality of devices based on low-dimensional nanomaterials. The equilibrium crystal shape (ECS) is a key quantity in this…
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Mattia Musolino, Abbes Tahraoui, Sergio Fernández-Garrido +4
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation t…
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Mattia Musolino, Abbes Tahraoui, Friederich Limbach +5
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by mol…
Picosecond strain dynamics in GeSbTe monitored by time-resolved x-ray diffraction
Paul Fons, Peter Rodenbach, Kirill V. Mitrofanov +9
Coherent phonons (CP) generated by laser pulses on the femtosecond scale have been proposed as a means to achieve ultrafast, non-thermal switching in phase-change materials such as…
The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)
Timo Schumann, Martin Dubslaff, Myriano H. Oliveira +3
Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\…
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
F. Fromm, M. H. Oliveira, A. Molina-Sánchez +5
We report a Raman study of the so-called buffer layer with periodicity which forms the intrinsic interface structure between epitaxial graphene…
Luminescence of GaAs nanowires consisting of wurtzite and zincblende segments
Uwe Jahn, Jonas Lähnemann, Carsten Pfüller +6
GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that opt…
Silicon Nanowires, Catalytic Growth and Electrical Characterization
Walter M. Weber, Georg S. Duesberg, Andrew P. Graham +7
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au cata…