137 citations · 664 across the 13 of their papers we have counts for
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Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN
Hong Li, Lutz Geelhaar, Henning Riechert +1
Crystal morphologies are important for the design and functionality of devices based on low-dimensional nanomaterials. The equilibrium crystal shape (ECS) is a key quantity in this…
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Mattia Musolino, Abbes Tahraoui, Sergio Fernández-Garrido +4
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation t…
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Mattia Musolino, Abbes Tahraoui, Friederich Limbach +5
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by mol…
Picosecond strain dynamics in GeSbTe monitored by time-resolved x-ray diffraction
Paul Fons, Peter Rodenbach, Kirill V. Mitrofanov +9
Coherent phonons (CP) generated by laser pulses on the femtosecond scale have been proposed as a means to achieve ultrafast, non-thermal switching in phase-change materials such as…
The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)
Timo Schumann, Martin Dubslaff, Myriano H. Oliveira +3
Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\…