137 citations · 664 across the 13 of their papers we have counts for
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Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Hanno Küpers, Ryan B. Lewis, Abbes Tahraoui +5
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diamet…
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
Hanno Küpers, Abbes Tahraoui, Ryan B. Lewis +6
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations…
Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials
Kirill V. Mitrofanov, Paul Fons, Kotaro Makino +16
Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-ch…