Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
arXiv:1708.02454 · doi:10.1088/1361-6641/aa8c15
Abstract
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations and their impact on NW growth by molecular beam epitaxy. We show that boiling the substrate in ultrapure water leads to a significant improvement in the vertical yield of NWs (realizing 80%) grown on substrates patterned by electron-beam lithography (EBL). Tentatively, we attribute this improvement to a reduction in atomic roughness of the substrate in the mask opening. On this basis, we transfer our growth results to substrates processed by a technique that enables the efficient patterning of large arrays, nano imprint lithography (NIL). In order to obtain hole sizes below 50 nm, we combine the conventional NIL process with an indirect pattern transfer (NIL-IPT) technique. Thereby, we achieve smaller hole sizes than previously reported for conventional NIL and growth results that are comparable to those achieved on EBL patterned substrates.
References in corpus (2)
Cited by in corpus (6)
- Diameter evolution of selective area grown Ga-assisted GaAs nanowires
- Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
- In-situ X-ray analysis of misfit strain and curvature of bent polytypic GaAs-In(x)Ga(1-x)As core-shell nanowires
- Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry
- Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
- Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy