55 citations · 153 across the 9 of their papers we have counts for
24 papers
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…
Exploiting of flux shadowing effect on InGaAs asymmetric shell growth for strain and bending engineering in GaAs - InGaAs core - shell NW arrays
Mahmoud Al Humaidi, Julian Jakob, Ali Al Hassan +8
Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrat…
Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells
Hanno Küpers, Ryan B. Lewis, Pierre Corfdir +6
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal positio…
Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments
Ali AlHassan, Jonas Lähnemann, Arman Davtyan +8
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, wh…
Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires
G. Calabrese, D. van Treeck, V. M. Kaganer +6
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/AlO$_{3…
Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry
Ali AlHassan, Jonas Lähnemann, Steven Leake +9
We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/InGaAs/GaAs/AlAs/GaAs nanowires. Fabri…