131 citations · 1.9k across the 71 of their papers we have counts for
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cond-mat.mes-hall2015★ 41 cited
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
M. Musolino, D. van Treeck, A. Tahraoui +6
We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si s…
cond-mat.mtrl-sci2015★ 20 cited
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
Johannes K. Zettler, Pierre Corfdir, Lutz Geelhaar +3
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a tw…