Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Abstract

We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN nanowire ensembles. Furthermore, we also demonstrate that the growth conditions employed during the incubation time that precedes nanowire nucleation do not influence the properties of the final nanowire ensemble. Therefore, when growing GaN nanowires at elevated temperatures or with low Ga/N ratios, the total growth time can be reduced significantly by using more favorable growth conditions for nanowire nucleation during the incubation time.

References in corpus (8)

• A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
• Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
• Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles
• Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
• Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires
• High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
• Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires
• Sub-meV linewidth in GaN nanowire ensembles: absence of surface excitons due to the field-ionization of donors

Cited by in corpus (5)

• Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
• Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films
• Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
• Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
• Density control of GaN nanowires at the wafer scale using self-assembled SiN${}_x$ patches on sputtered TiN(111)