55 citations · 219 across the 18 of their papers we have counts for
19 papers
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
Huaide Zhang, Jingxuan Kang, Aidan F. Campbell +3
(In,Ga)N layers are grown by plasma-assisted molecular beam epitaxy on GaN templates. We introduce a two-step protocol that involves switching the growth conditions from initially…
Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques
Huaide Zhang, Philipp John, Jingxuan Kang +3
We present a systematic investigation of Ga adsorption and desorption kinetics on the wurtzite GaN(0001) surface using four in situ techniques operated simultaneously: reflection h…
Molecular Beam Epitaxy of AlScN Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
Adriano Notarangelo, Rudeesun Songmuang, Mostafa Saleh +10
We study the molecular beam epitaxy of self-assembled AlScN nanowires on conductive TiN layers and demonstrate their application in piezoelectric na…
Fabrication of (In,Ga)N pseudo-substrates by a three-step growth protocol without ex-situ processing
Huaide Zhang, Aidan F. Campbell, Jingxuan Kang +3
We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change grow…
Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing
Jingxuan Kang, Rose-Mary Jose, Oliver Brandt +1
The top-down fabrication of nanowires based on patterning via metal dewetting is a cost-effective and scalable approach that is particularly suited for applications requiring large…
Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD
Vladimir M. Kaganer, Domenik Spallek, Philipp John +2
Correlations between dislocations in crystals reduce the elastic energy via screening of the strain by the surrounding dislocations. We study the correlations of threading dislocat…
Diameter dependence of light absorption in GaAs nanowires evidenced by photoluminescence spectroscopy
Francisca Marín, Ijaas Mohamed, Oliver Brandt +1
Semiconductor nanowires are attractive for photovoltaic applications because light absorption can be enhanced compared to planar layers due to the more complex coupling of light wi…
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
Jingxuan Kang, Rose-Mary Jose, Miriam Oliva +6
The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation…
ScN/GaN(): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
Philipp John, Achim Trampert, Duc Van Dinh +6
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN() surface. To this end, ScN is grown on free-standing GaN() substrates and self-ass…
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
M Gómez Ruiz, Aron Castro, Jesús Herranz +5
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of…
Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy
Thomas Auzelle, Chiara Sinito, Jonas Lähnemann +5
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epi…
Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature
C. Chèze, F. Feix, J. Lähnemann +6
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhi…
In/GaN(0001)- adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices
C. Chèze, F. Feix, M. Anikeeva +5
We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorba…
Crystal-phase quantum dots in GaN quantum wires
P. Corfdir, C. Hauswald, O. Marquardt +6
We study the nature of excitons bound to I1 basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy.…
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
Johannes K. Zettler, Pierre Corfdir, Lutz Geelhaar +3
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a tw…
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency
P. Corfdir, C. Hauswald, J. K. Zettler +6
We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy…
Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures
Martin Wölz, Jonas Lähnemann, Oliver Brandt +7
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost ze…
Current path in light emitting diodes based on nanowire ensembles
Friederich Limbach, Christian Hauswald, Jonas Lähnemann +8
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam…