activity
20142024
most citedMolecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

92 citations · 607 across the 19 of their papers we have counts for

collaborators

20 papers

cond-mat.mtrl-sci2024★ 40 cited

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

J. K. Zettler, C. Hauswald, P. Corfdir +5

In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire n…

cond-mat.mtrl-sci2024★ 87 cited

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao +10

We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we e…

cond-mat.mes-hall2024★ 84 cited

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Johannes K. Zettler, Pierre Corfdir, Christian Hauswald +10

The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly…

cond-mat.mtrl-sci2021

Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells

Hanno Küpers, Ryan B. Lewis, Pierre Corfdir +6

Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal positio…

cond-mat.mtrl-sci2020

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

G. Calabrese, D. van Treeck, V. M. Kaganer +6

We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/AlO$_{3…

cond-mat.mtrl-sci2019★ 19 cited

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Jesús Herranz, Pierre Corfdir, Esperanza Luna +8

Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…