92 citations · 607 across the 19 of their papers we have counts for
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High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
J. K. Zettler, C. Hauswald, P. Corfdir +5
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire n…
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao +10
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we e…
Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells
Hanno Küpers, Ryan B. Lewis, Pierre Corfdir +6
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal positio…
Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires
G. Calabrese, D. van Treeck, V. M. Kaganer +6
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/AlO$_{3…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…
Quantum dot self-assembly driven by a surfactant-induced morphological instability
Ryan B. Lewis, Pierre Corfdir, Hong Li +4
In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost o…
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
Gabriele Calabrese, Pierre Corfdir, Guanhui Gao +5
We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowi…
Radial Stark effect in (In,Ga)N nanowires
Jonas Lähnemann, Pierre Corfdir, Felix Feix +5
We study the luminescence of unintentionally doped and Si-doped InGaN nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emis…
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
Johannes K. Zettler, Pierre Corfdir, Lutz Geelhaar +3
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a tw…
Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires
Christian Hauswald, Pierre Corfdir, Johannes K. Zettler +9
We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both…