Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Abstract

Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 $\mu$m in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on scanning transmission electron microscopy. The spontaneous emission of these nanowire structures is investigated by cathodoluminescence and photoluminescence spectroscopy. Thermal redistribution of charge carriers to larger quantum dots explains the long wavelength emission achieved at room temperature. Finally, in order to demonstrate the feasibility of the presented nanowire heterostructures as electrically driven light emitters monolithically integrated on Si, a light emitting diode is fabricated exhibiting room-temperature electroluminescence at 1.26 $\mu$m.

arXiv commentThis document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in ACS Applied Nano Materials (2019), copyright (C) American Chemical Society after peer review. To access the final edited and published work see this https://doi.org/10.1021/acsanm.9b01866, the supporting information is available (free of charge) under the same link

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Cited by in corpus (3)

• Superconductivity and parity preservation in as-grown In islands on InAs nanowires
• Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
• Monolithic Integration of Sub-50 nm III-V Nano-Heterostructures on Si (001) for Telecom Photonics