224 citations · 2.3k across the 66 of their papers we have counts for
67 papers
Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles
Sergio Fernández-Garrido, Johannes K. Zettler, Lutz Geelhaar +1
We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of…
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Sergio Fernández-Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growt…
Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
Sergio Fernández-Garrido, Xiang Kong, Tobias Gotschke +4
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced b…
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
J. K. Zettler, C. Hauswald, P. Corfdir +5
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire n…
Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
Sergio Fernàndez-Garrido, Kai U. Ubben, Jens Herfort +2
We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial F…
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao +10
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we e…